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MEEZ
Transistor BD137 (ECB) NPN 60V 1A TO126
Type Designator: BD137
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
Gewicht:
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